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《先进材料》(Adv. Mater.)杂志刊发“高环境稳定性RhI3二维纳米片在光电子中的应用”

发布时间:2020-12-25来源: 编辑:

Fakun Wang#, Zhuang Zhang#, Yue Zhang, Anmin Nie, Wei Zhao, Dong Wang, Fuqiang Huang*, Tianyou Zhai*, Honeycomn RhI3 Flakes with High Environmental Stability for Optoelectronics, Advanced Materials 2020, 32, 2001979.

https://doi.org/10.1002/adma.202001979.

Abstract: The emerging 2D layered transition metal trihalides (MX3) have attracted extremely high interest for their exceptional structural and physical properties. Continuing to extend the library of 2D MX3 is essential for exploring new physical phenomena and enabling new functionality. Herein, we report the optical, electrical properties and photodetecting behaviors of atomically thin RhI3 flakes exfoliated from bulk crystals. This compound exhibits superior air and thermal stability, as well as thickness-dependent bandgap from 1.1 eV (18L) to 1.4 eV (2L). Field-effect transistors based on the few-layer RhI3 flakes display n-type semiconducting behavior with competitive mobility of 2.5 cm2 V-1 s-1 and ON/OFF current ratio of 4 × 104. Importantly, the outstanding responsivity of 11.5 A W-1 and high specific detectivity of 2 ´ 1010 Jones are recorded from the RhI3 photodetectors under 980 nm illumination at room temperature in air. These findings indicate a variety of potential applications of atomically thin RhI3 flakes in future 2D material-based electronic and optoelectronic devices.